Effect of Magnetic Field on Residual Impurity Concentration in LEC GaAs Single Crystal

Effect of magnetic field on impurity concentration incorporated into an LEC GaAs crystal has been studied. The contamination from crucibles and/or B2O3 has been found to tend to be reduced by application of a magnetic field during puling. The residual or intentionally doped carbon concentration decreased and doped chromium concentration increased under the magnetic field. These results are explained by assuming that the GaAs melt convection is suppressed and the effective viscosity of the melt is increased under the magnetic field.