论文信息 - Room-temperature operation of index-guided 1.55 /spl mu/m InP-based vertical-cavity surface-emitting laser

Room-temperature operation of index-guided 1.55 /spl mu/m InP-based vertical-cavity surface-emitting laser

A novel concept for long-wavelength InP-based vertical cavity lasers (VCSELs) with a buried tunnel junction enables effective electrical and optical confinement and yields low series resistance. VCSELs with aperture diameters of 13 /spl mu/m exhibit threshold currents of 10 mA, single-mode emission, a quantum efficiency of 10% and a threshold voltage of only 1.2 V.

[1] E. Derouin,et al. Metamorphic DBR and tunnel-junction injection. A CW RT monolithic long-wavelength VCSEL , 1999 .

[2] L. Coldren,et al. Room-temperature, electrically-pumped, multiple-active-region VCSELs with high differential efficiency at 1.55 /spl mu/m , 1999, Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464).

[3] M. Amann,et al. Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction , 2000 .

[4] Kent D. Choquette,et al. Comprehensive numerical modeling of vertical-cavity surface-emitting lasers , 1996 .

[5] C. Kazmierski,et al. MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP , 1999, IEEE Photonics Technology Letters.