论文信息 - Phosphorous Diffusion in N2+-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering - 字舞流文

Phosphorous Diffusion in N2+-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering

B. Colombeau | C. Thomidis | G. Pepponi | K. Papagelis | P. Dimitrakis | V. Ioannou-Sougleridis | N. Vouroutzis | M. Barozzi | D. Skarlatos | M. Skoulikidou | D. Velessiotis