Reverse breakdown in long wavelength lateral collection CdxHg1−xTe diodes

Long wavelength diodes in CdxHg1−xTe show large deviations from ideality in their reverse characteristics. The excess currents are attributed in many published papers on band to band tunneling at high reverse bias and to trap assisted tunneling at low reverse bias. Measurements of photocurrent multiplication, current–voltage characteristics, and noise have been made on long wavelength loophole diodes to determine the breakdown mechanism. This has produced strong evidence that the reverse characteristics of good quality diodes of this type are limited by impact ionization. At higher biases, there is evidence of an additional breakdown mechanism, probably tunneling.