Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers
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[1] Sattwik Deb Mishra,et al. Optical superradiance of a pair of color centers in an integrated silicon-carbide-on-insulator microresonator , 2022, 2202.04845.
[2] N. T. Son,et al. Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence , 2021, Nature Materials.
[3] U. Schmid,et al. Communication—Current Oscillations in Photoelectrochemical Etching of Monocrystalline 4H Silicon Carbide , 2021, ECS Journal of Solid State Science and Technology.
[4] L. Voss,et al. High temperature isotropic and anisotropic etching of silicon carbide using forming gas , 2021 .
[5] J. Vučković,et al. Integrated Quantum Photonics with Silicon Carbide: Challenges and Prospects , 2020, 2010.15700.
[6] Dries Vercruysse,et al. 4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics , 2020 .
[7] David O. Bracher,et al. Purcell enhancement of a single silicon carbide color center with coherent spin control. , 2020, Nano letters.
[8] Farrokh Ayazi,et al. Monocrystalline Silicon Carbide Disk Resonators on Phononic Crystals with Ultra-Low Dissipation Bulk Acoustic Wave Modes , 2019, Scientific Reports.
[9] A. Bauer,et al. Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC , 2019, AIP Advances.
[10] S. Götzinger,et al. Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing , 2018, Applied Physics Letters.
[11] H. Mitlehner,et al. Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices , 2018, Materials Science Forum.
[12] R. Soref,et al. Dispersion of nonresonant third-order nonlinearities in Silicon Carbide , 2017, Scientific Reports.
[13] Burak Ozpineci,et al. Review of Silicon Carbide Power Devices and Their Applications , 2017, IEEE Transactions on Industrial Electronics.
[14] A. Ouerghi,et al. Atomic and electronic structure of trilayer graphene/SiC(0001): Evidence of Strong Dependence on Stacking Sequence and charge transfer , 2016, Scientific Reports.
[15] I. Dufour,et al. Fundamental Theory of Resonant MEMS Devices , 2015 .
[16] Thomas W. Kenny,et al. Quantum Limit of Quality Factor in Silicon Micro and Nano Mechanical Resonators , 2013, Scientific Reports.
[17] Tsunenobu Kimoto,et al. Single-crystalline 4H-SiC micro cantilevers with a high quality factor , 2013 .
[18] Chih-Fang Huang,et al. Photoelectrochemical etching to fabricate single-crystal SiC MEMS for harsh environments , 2011 .
[19] D. H. V. Dorp. Etching of wide-bandgap chemically resistant semiconductors: An electrochemical study , 2010 .
[20] H. Föll,et al. Self-organization phenomena at semiconductor electrodes , 2009 .
[21] T. Kondo,et al. Accurate measurements of second-order nonlinear optical coefficients of 6H and 4H silicon carbide , 2009 .
[22] M. Okano,et al. Direct creation of three-dimensional photonic crystals by a top-down approach. , 2009, Nature materials.
[23] R. Cheung,et al. A review of silicon carbide development in MEMS applications , 2009 .
[24] W. Arnoldbik,et al. Electrochemical Growth of Micrometer-Thick Oxide on SiC in Acidic Fluoride Solution , 2009 .
[25] W. J. Choyke,et al. Electrochemical Polishing of p-Type 4H SiC , 2009 .
[26] H. B. Weber,et al. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. , 2009, Nature materials.
[27] H. Ryssel,et al. Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide , 2008 .
[28] J. Weyher,et al. Anodic etching of SiC in alkaline solutions , 2007 .
[29] J. Kelly,et al. Photoelectrochemistry of 4H-SiC in KOH solutions , 2007 .
[30] D. Zhuang,et al. Wet etching of GaN, AlN, and SiC : a review , 2005 .
[31] H. Matsunami,et al. Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001) , 2004 .
[32] P. Ramasamy,et al. Electrochemical Etching of 6H-SiC Using Aqueous KOH Solutions with Low Surface Roughness , 2003 .
[33] Osamu Nakatsuka,et al. Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC , 2003 .
[34] Moo Whan Shin,et al. Study on the photoelectrochemical etching process of semiconducting 6H/SiC wafer , 2002 .
[35] H. Arwin,et al. Surface, Pore Morphology, and Optical Properties of Porous 4H-SiC , 2001 .
[36] R. Helbig,et al. Electrochemical etching of silicon carbide , 1999 .
[37] Richard M. Osgood,et al. Dopant-selective etch stops in 6H and 3C SiC , 1997 .
[38] Anthony D. Kurtz,et al. Photoelectrochemical Etching of 6 H ‐ SiC , 1994 .
[39] A. Kurtz,et al. Photoelectrochemical conductivity selective etch stops for SiC , 1992 .
[40] O. J. Glembocki,et al. Hydration Model for the Molarity Dependence of the Etch Rate of Si in Aqueous Alkali Hydroxides , 1991 .
[41] G. Somorjai,et al. The surface oxidation of alpha-silicon carbide by O2 from 300 to 1373 K , 1991 .
[42] L. Cook. Chemical processes in glass polishing , 1990 .
[43] G. D. Boyd,et al. Directional reactive ion etching at oblique angles , 1980 .
[44] U. Schmid,et al. Stacked Layers of Different Porosity in 4H SiC Substrates Applying a Photoelectrochemical Approach , 2017 .
[45] M. Shur,et al. Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe , 2001 .
[46] Inspec,et al. Properties of silicon carbide , 1995 .