论文信息 - Processes and Device Technologies for AlGaN/GaN High Electron Mobility Transistors

Processes and Device Technologies for AlGaN/GaN High Electron Mobility Transistors

The AlInGaN-based high electron mobility transistor (HEMT) has proven to be the leading candidate for simultaneously realizing ultra-high frequency and ultra-high power amplifiers. The potential for these devices extends into operation in the mm-wave regime. Processes and device technologies that have resulted in these tremendous improvements are addressed

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