CuPt ordering in high bandgap GaxIn1−xP alloys on relaxed GaAsP step grades

We have fabricated a series of GaxIn1−xP samples over the compositional range 0.51<x<0.76 on GaAs substrates. The samples were prepared by first growing a thick step-graded layer of GaAs1−yPy to bridge the lattice misfit between the GaxIn1−xP layers and the GaAs substrate. The order parameter was tuned using a dilute antimony surfactant during growth. The composition, strain, and order parameter of each sample were characterized by x-ray diffraction, and the bandgap was measured by photoluminescence. We find good agreement between the experimentally measured bandgaps and theoretically modeled curves.

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