A single-chip Si-LDMOS power amplifier for GSM

A 0.23 /spl mu/m single-chip Si-LDMOS high-power amplifier with matching circuits and all control blocks for quad-band GSM handset phones is implemented in 2.1/spl times/2.45 mm/sup 2/. The IC achieves a maximum PAE of 54% at 36 dBm output power and input VSWR of less than 1.6 over the GSM850/900 bands.

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