PMOSFET anti-fuse using GIDL-induced-HEIP mechanism

Abstract We propose a novel electrical fuse (e-fuse) program procedure using shallow trench isolation (STI) edge trapping mechanism of PMOSFET by applying AC pulses. We obtained flash characteristics using conventional PMOSFET structure, when injected AC pulse on source node under off-state condition (Vg = high, Vd = low). In order to verify programming, double hump characteristics and thermal conduction analysis are introduced.

[1]  J. Fulford,et al.  One time programming device yield study based on anti-fuse gate oxide breakdown on p-type and n-type substrates , 2005, 2005 IEEE International Integrated Reliability Workshop.

[2]  M. Bohr,et al.  A PROM element based on salicide agglomeration of poly fuses in a CMOS logic process , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[3]  Y. Kobayashi,et al.  A Novel Cu Electrical Fuse Structure and Blowing Scheme Utilizing Crack-Assisted Mode for 90-45nm-Node and Beyond , 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

[4]  S.K. Iyer,et al.  Electrically programmable fuse (eFUSE) using electromigration in silicides , 2002, IEEE Electron Device Letters.

[5]  Reliable metal-to-metal oxide antifuses , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[6]  Hiroshi Ito,et al.  Pure CMOS one-time programmable memory using gate-ox anti-fuse , 2004, Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571).

[7]  Xiang Chen,et al.  Electrically Programmable Fuse (eFUSE): From Memory Redundancy to Autonomic Chips , 2007, 2007 IEEE Custom Integrated Circuits Conference.

[8]  J. Fellner,et al.  Lifetime study for a poly fuse in a 0.35 /spl mu/m polycide CMOS process , 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

[9]  T. Sasaki,et al.  Melt-segregate-quench programming of electrical fuse , 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

[10]  T.S. Doorn,et al.  Ultra-fast programming of silicided polysilicon fuses based on new insights in the programming physics , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[11]  J.A. Fifield,et al.  Reliability and design qualification of a sub-micron tungsten silicide E-Fuse , 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

[12]  C. Tian,et al.  Reliability Investigation of NiPtSi Electrical Fuse With Different Programming Mechanisms , 2007, IEEE Transactions on Device and Materials Reliability.