论文信息 - Correlation of stress with photo-degradation in hydrogenated amorphous silicon prepared by hot-wire CVD

Correlation of stress with photo-degradation in hydrogenated amorphous silicon prepared by hot-wire CVD

An innovative bending-beam method is used to study the stress of thin film a-Si:H deposited on thin quartz by hot-wire chemical vapor deposition (CVD) techniques. When the deposition temperature increases from 280 to 440 C the hydrogen content decreases from 8 to <1 at.%, and the initial compressive stress also decreases from 420 to 74 MPa. The authors found that there is a 10{sup {minus}4} photo-induced increase of the initial compressive stress under 300 mW/cm{sup 2} light-soaking, which can be recovered to the initial value by thermal annealing at 160 C for 1 h. The results imply that the Si-H bonds contribute to the compressive stress in the a-Si:H film. There is no simple correlation between the stress and the photodegradation of the electric properties.

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