Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part I

A device structure based compact model for advanced trench gate IGBTs is proposed. The model is formulated only with device structure parameters so that no fitting parameters are required. The model is applicable to extreme conditions such as under very low or high temperatures. The validity of the model formulation is confirmed with two-dimensional TCAD simulation for voltage range of 1.2kV and 3.3kV IGBTs, and for temperature range of 300K and 450K. In this paper conduction mode formulation is proposed which has the potential to be used for system level failure analysis.

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