Bias current influence on semiconductor optical amplifier's equivalent circuit

Abstract The equivalent electrical circuits – including the parasitic elements and their variations with the injected bias current – for three semiconductor optical amplifiers (SOA) were obtained. Frequency domain measurements with further tuning of numerical modeling parameters were used to extract circuit parameters. Characterization of chip-on-carrier and encapsulated devices agree with numerical data up to 20 GHz. The results are relevant for designing fast speed, SOA-gated switches in optical routers.

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