Positive-Tone Photoresist Process for Supercritical Carbon Dioxide Development

A new supercritical carbon dioxide (scCO2) developable, chemically amplified positive-tone photoresist is introduced by silylation of poly(tetrahydropyranyl methacrylate-co-1H,1H-dihydroperfluorooctyl methacrylate) block and random copolymers following lithographic patterning by 248-nm irradiation. High-resolution submicrometer features are possible with scCO2 as the developing solvent.