论文信息 - Impact of device scaling on the electrical properties of MoS2 field-effect transistors - 字舞流文

Impact of device scaling on the electrical properties of MoS2 field-effect transistors

I. Radu | M. Heyns | D. Lin | S. Sutar | Q. Smets | D. Verreck | I. Asselberghs | G. Arutchelvan | B. Groven | J. Jussot | A. Gaur | Z. Ahmed