论文信息 - 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes

10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes

We report on the development of solid-state deep ultraviolet light sources optimized for the germicidal applications. Pulsed power levels in excess of 10 mW were achieved for AlGaN based 265 nm light emitting diodes by improving the material quality using Migration-Enhanced Metal Organic Chemical Vapor Deposition. Packaged devices reached the continuous-wave power of 237 µW at 30 mA and a pulse power exceeding 10 mW for 1.2 A driving current.

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