Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes

In this paper, we propose an ultrathin SiGe shell channel p-type FinFET for sub-10-nm technology nodes. Owing to the large valence band offset (VBO or <inline-formula> <tex-math notation="LaTeX">$\Delta {E}_{v}$ </tex-math></inline-formula>) between SiGe shell and Si fin, a hole quantum well is configured in the high-mobility SiGe region as the major conduction path. The proposed device is optimally designed and characterized in dc and ac. Here, high-<inline-formula> <tex-math notation="LaTeX">$\kappa$ </tex-math></inline-formula>/metal gate is adopted for strong gate controllability and the high degree of freedom in threshold voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{{\text {th}}}$ </tex-math></inline-formula>) adjustment. For a high reliability, modeling of the mobility (<inline-formula> <tex-math notation="LaTeX">$\mu$ </tex-math></inline-formula>) and saturation velocity (<inline-formula> <tex-math notation="LaTeX">${v}_{{\text {sat}}}$ </tex-math></inline-formula>) is carried out for different Ge fractions (<inline-formula> <tex-math notation="LaTeX">${x}$ </tex-math></inline-formula>). The E<sub>g</sub> and VBO are also determined for different <inline-formula> <tex-math notation="LaTeX">${x}$ </tex-math></inline-formula> from empirical data. With the set of modeled values and various quantum-mechanical models, the proposed device has been simulated through rigorous 3-D technology computer-aided design simulation. The designed device shows a high scalability reaching down to L<sub>g</sub> = 5 nm. At L<sub>g</sub> of 5 nm with a driving voltage (V<sub>DD</sub>) of −0.5 V, a current gain cutoff frequency (f<sub>T</sub>) = 368.88 GHz, dynamic power = 0.055 fJ/<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>, and an intrinsic delay <inline-formula> <tex-math notation="LaTeX">$(\tau) = 0.37$ </tex-math></inline-formula> ps are achieved. This is confirmed by the potential low-power and high-speed operations with a strong gate controllability.

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