A 0.8-watt Ka-band power amplifier

A hybrid, 2-stage, high electron mobility transistor (HEMT) power amplifier is reported operating over the 32-35-GHz band with a minimum output power of 28 dBm. At 34 GHz, an output power of 0.8 W with an associated power-added efficiency of 26.6% has been demonstrated. Biased for efficiency, this amplifier has demonstrated a power-added efficiency of 32.2% with an output power of over 0.7 W.<<ETX>>

[1]  G. Hegazi,et al.  GaAs molecular beam epitaxy monolithic power amplifiers at U-band , 1989, Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium.

[2]  F. R. Phelleps,et al.  A 0.5-watt 47-GHz power amplifier using GaAs monolithic circuits , 1992 .

[3]  N. Camilleri,et al.  A high efficiency Ka-band monolithic GaAs FET amplifier , 1988, 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988..

[4]  S. Arai,et al.  Ka-band monolithic GaAs two-stage power amplifier , 1989, Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium.

[5]  P. M. Smith,et al.  35 GHz pseudomorphic HEMT MMIC power amplifier , 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.

[6]  P. C. Chao,et al.  44 GHz hybrid HEMT power amplifiers , 1989, IEEE MTT-S International Microwave Symposium Digest.

[7]  N. Camilleri,et al.  Monolithic 50 GHz GaAs FET power amplifier , 1989, 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium.

[8]  Hua Quen Tserng,et al.  Doped-channel heterojunction structures for millimeter-wave discrete devices and MMICs , 1989, IEEE Military Communications Conference, 'Bridging the Gap. Interoperability, Survivability, Security'.

[9]  M. J. Schindler,et al.  A 0.25-watt three-stage Q-band MESFET monolithic power amplifier , 1991, [1991] GaAs IC Symposium Technical Digest.