Simultaneous Measurement of Carrier Mobility and Recombination Lifetime on a Testchip in MOS-Technology by means of the Shockley-Haynes-Experiment within the Temperature Range 98 K to 398 K

With the purpose of determining material parameters of MOS-technology dedicated Shockley-Haynes-structures and MOS varactors, among others, have been integrated on a single chip. By use of a specially developed electronic unit an improved performance of the Shockley-Haynes-experiment has been achieved. In this paper from the comparison of measurements and analytic simulations the hole mobility μp and the inherent recombination lifetime τp are determined simultaneously. The extracted values of hole mobility agree to well-known model curves, whereas lifetime is rather short showing a positive temperature coefficient[1-2]. Ct-measurements on MOS varactors give a generation/recombination lifetime ratio τg/τr=25 (T=298K). Further analysis of generation lifetime τg indicates recombination/generation levels close to the intrinsic energy.