50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics
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D. Muller | J. Grazul | P. Kalavade | R. Johnson | P. Silverman | D. Monroe | T. Sorsch | T. Nigam | Sang‐Hyun Oh | E. Ferry | F. Klemens | J. Miner | R. Keller | W. Mansfield | D. Jacobson | M. Givens | P. Voyles | J. Hergenrother | M. R. Baker | N. A. Ciampa | M.L. Green | S. Hillenius | C. King | M. Morris | J. Rosamilia | G. Wilk | T. Boone | K. Short | A. Kornblit | C. Werkhoven | B. Busch | M. Bude | A. Fiory | H. Krautter | J. T. Lee | B. Sapjeta | K. Steiner | E. Shero | C. Pomarede | M. Mazanec | M. Green
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