High-Responsivity Photodetection by a Self-Catalyzed Phase-Pure p-GaAs Nanowire.
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M. Wang | Huiyun Liu | Yue Sun | A. Sánchez | Yunyan Zhang | K. Peng | Shiyao Wu | C. Qian | Feilong Song | Sibai Sun | Xiulai Xu | Z. Zuo | Attia Falak | Kuijuan Jin | H. Ali | Jing Tang | Hassan Ali
[1] Ray R. LaPierre,et al. A review of III–V nanowire infrared photodetectors and sensors , 2017 .
[2] Xiaodong Yang,et al. Impact of Surface Point Defects on Electronic Properties and p-Type Doping of GaAs Nanowires , 2016 .
[3] Wei Lu,et al. Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire. , 2016, Nano letters.
[4] Xuewen Geng,et al. Self-catalyzed molecular beam epitaxy growth and their optoelectronic properties of vertical GaAs nanowires on Si(111) , 2016 .
[5] Zhiyong Fan,et al. When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors. , 2016, Nano letters.
[6] Huiyun Liu,et al. Influence of Droplet Size on the Growth of Self-Catalyzed Ternary GaAsP Nanowires. , 2016, Nano letters.
[7] Xiaoqiang Li,et al. Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity , 2015, 1512.06867.
[8] A. Castellanos-Gómez,et al. Gate Controlled Photocurrent Generation Mechanisms in High-Gain In₂Se₃ Phototransistors. , 2015, Nano letters.
[9] S. Roddaro,et al. Rectification and Photoconduction Mapping of Axial Metal-Semiconductor Interfaces Embedded in GaAs Nanowires , 2015 .
[10] C. Jagadish,et al. Room temperature GaAsSb single nanowire infrared photodetectors , 2015, Nanotechnology.
[11] A. Pan,et al. Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31 μm , 2015 .
[12] G. Abstreiter,et al. Ultrafast Photodetection in the Quantum Wells of Single AlGaAs/GaAs-Based Nanowires. , 2015, Nano letters.
[13] Ning Han,et al. High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics. , 2015, ACS applied materials & interfaces.
[14] Hanne Kauko,et al. Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients. , 2015, Nano letters.
[15] Chao Liu,et al. Ultrafast, superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire. , 2014, Nanoscale.
[16] Huiyun Liu,et al. Self-catalyzed ternary core-shell GaAsP nanowire arrays grown on patterned Si substrates by molecular beam epitaxy. , 2014, Nano letters.
[17] Zhiyong Fan,et al. Single InAs nanowire room-temperature near-infrared photodetectors. , 2014, ACS nano.
[18] P. Warburton,et al. Mobility enhancement by Sb-mediated minimisation of stacking fault density in InAs nanowires grown on silicon. , 2014, Nano letters.
[19] P. Dapkus,et al. Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction , 2013 .
[20] C. Sow,et al. Photocurrent characteristics of individual GeSe2 nanobelt with Schottky effects , 2013, 1310.0439.
[21] Jared J. Hou,et al. GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties. , 2013, ACS nano.
[22] Hao Wang. High gain single GaAs nanowire photodetector , 2013 .
[23] J. Wu,et al. High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire , 2013, Nanoscale Research Letters.
[24] Huiyun Liu,et al. Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon , 2013, Nature Communications.
[25] P. Kratzer,et al. As vacancies, Ga antisites, and Au impurities in zinc blende and wurtzite GaAs nanowire segments from first principles , 2013, 1301.7339.
[26] Chennupati Jagadish,et al. Strong carrier lifetime enhancement in GaAs nanowires coated with semiconducting polymer. , 2012, Nano letters.
[27] B. Fimland,et al. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth. , 2012, Nano letters.
[28] W. Lu,et al. Distinct photocurrent response of individual GaAs nanowires induced by n-type doping. , 2012, ACS nano.
[29] Wenjun Zhang,et al. Visible-NIR photodetectors based on CdTe nanoribbons. , 2012, Nanoscale.
[30] M. Ek,et al. Electron trapping in InP nanowire FETs with stacking faults. , 2012, Nano letters.
[31] G. Abstreiter,et al. Direct observation of a noncatalytic growth regime for GaAs nanowires. , 2011, Nano letters.
[32] Bahram Nabet,et al. Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors , 2011 .
[33] M. Ek,et al. Probing the wurtzite conduction band structure using state filling in highly doped InP nanowires. , 2011, Nano letters.
[34] A. Dey,et al. Effects of crystal phase mixing on the electrical properties of InAs nanowires. , 2011, Nano letters.
[35] A. Alec Talin,et al. A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities , 2011, IEEE Journal of Selected Topics in Quantum Electronics.
[36] E. Kaxiras,et al. Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures , 2010, 1011.5165.
[37] Martin Heiss,et al. Impact of surfaces on the optical properties of GaAs nanowires , 2010 .
[38] M. Ek,et al. Changes in contact angle of seed particle correlated with increased zincblende formation in doped InP nanowires. , 2010, Nano letters.
[39] H. Shtrikman,et al. Structural phase control in self-catalyzed growth of GaAs nanowires on silicon (111). , 2010, Nano letters.
[40] Yong Ding,et al. Photoconductive enhancement of single ZnO nanowire through localized Schottky effects. , 2010, Optics express.
[41] J. Rogers,et al. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies , 2010, Nature.
[42] Youfan Hu,et al. Designing the electric transport characteristics of ZnO micro/nanowire devices by coupling piezoelectric and photoexcitation effects. , 2010, ACS nano.
[43] H. Shtrikman,et al. What Determines the Crystal Structure of Nanowires , 2010 .
[44] J. Petta,et al. Correlating the nanostructure and electronic properties of InAs nanowires. , 2009, Nano letters.
[45] Chennupati Jagadish,et al. Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy. , 2009, Nano letters.
[46] Zhong Lin Wang,et al. Gigantic enhancement in response and reset time of ZnO UV nanosensor by utilizing Schottky contact and surface functionalization. , 2009, Applied physics letters.
[47] G. Weihs,et al. Growth and characterization of GaAs nanowires on carbon nanotube composite films: toward flexible nanodevices. , 2008, Nano letters.
[48] E. Bakkers,et al. Twinning superlattices in indium phosphide nanowires , 2008, Nature.
[49] K. L. Martinez,et al. Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy , 2008 .
[50] H. Lüth,et al. GaAs photodetectors prepared by high-energy and high-dose nitrogen implantation , 2006 .
[51] Junya Suehiro,et al. Schottky-type response of carbon nanotube NO2 gas sensor fabricated onto aluminum electrodes by dielectrophoresis , 2006 .
[52] T. Ito,et al. An Empirical Potential Approach to Wurtzite–Zinc-Blende Polytypism in Group III–V Semiconductor Nanowires , 2006 .
[53] E. Bakkers,et al. Large redshift in photoluminescence of p-doped InP nanowires induced by Fermi-level pinning , 2006 .
[54] M. Willander,et al. Photoluminescence spectra of doped GaAs films , 2004 .
[55] Yiying Wu,et al. Room-Temperature Ultraviolet Nanowire Nanolasers , 2001, Science.
[56] T. Ito,et al. Simple Criterion for Wurtzite-Zinc-Blende Polytypism in Semiconductors , 1998 .
[57] J. Ohsawa,et al. Asymmetric Photocurrent Characteristics in GaAs/AlGaAs Phototransistors with Very Short Carrier-Diffusion Lengths , 1998 .
[58] Eicke R. Weber,et al. The advanced unified defect model for Schottky barrier formation , 1988 .
[59] Kazuhiro Kudo,et al. Photoluminescence spectra of undoped GaAs grown by molecular‐beam epitaxy at very high and low substrate temperatures , 1986 .
[60] G. B. Stringfellow,et al. Photoluminescence of carbon-implanted GaAs , 1981 .
[61] Xiulai Xu,et al. M ay 2 01 0 Highly sensitive , photon number resolving detectors mediated by phonons using δ-doped GaAs transistors , 2018 .
[62] D. Thompson,et al. GaAs core--shell nanowires for photovoltaic applications. , 2009, Nano letters.