Evaluation of characteristics of CdTe detector by laser pulses

Pulse laser was due to investigate characteristics of Schottky-diode type CdTe detector. The pulse laser was irritated to cleaved surface of the CdTe detector to control incident position and time accurately. Even though one-photon energy of the plse laser is different from that of γ-ray mainly detected by the CdTe detectors, amount of pulse energy of the laser can be adjustable to the γ-ray energy by controlling incident power and pulse duration time. Incident position dependence of electric signal through preamplifier was measured and the dependence was changed by charging bias voltage applied to the CdTe detector. This dependence can be explained by distribution of depletion layer at the Schottky interface.