Analysis of Geometry-Dependent Parasitics in Multifin Double-Gate FinFETs

This paper analyzes the geometry-dependent parasitic components in multifin double-gate fin field-effect transistors (FinFETs). Parasitic fringing capacitance and overlap capacitance are physically modeled as functions of gate geometry parameters using a conformal mapping method. Also, a physical gate resistance model is presented, combined with parasitic capacitive couplings between source/drain fins and gates. The effects of geometrical parameters on FinFET design under different device configurations are thoroughly studied

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