Ion Beam Mixing of Sb Schottky Contacts on n-Si

The I—V characteristics of as—deposited antimony Schottky contacts on silicon were extremely sensitive to interface conditions. This led to unpredictable results for the unimplanted contacts. After Si* implantation the contacts displayed more uniform I—V characteristics. Implantation led to higher values for the ideality constant, the series resistance and for the saturation current. The ideality factor seems to decrease at the higher implantation doses (ϕ ≥ 5×10 14 Sb + cn −2 ), while no clear dose dependence patterns were observed for the saturation current and series resistance after implantation.

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