Electromigration-induced failures in thin-film Al-Cu conductors
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[1] B. Agarwala,et al. Effect of Microstructure on the Electromigration Life of Thin‐Film A1–Cu Conductors , 1972 .
[2] Robert Rosenberg,et al. Void Formation and Growth During Electromigration in Thin Films , 1971 .
[3] M. J. Attardo,et al. Statistical Metallurgical Model for Electromigration Failure in Aluminum Thin‐Film Conductors , 1971 .
[4] J. K. Howard,et al. HILLOCKS AS STRUCTURAL MARKERS FOR ELECTROMIGRATION RATE MEASUREMENTS IN THIN FILMS , 1971 .
[5] B. Patnaik,et al. STUDY OF FAILURE MECHANISMS IN Al–Cu THIN FILMS BY HIGH‐VOLTAGE ELECTRON MICROSCOPY , 1971 .
[6] F. d'Heurle,et al. The effect of copper additions on electromigration in aluminum thin films , 1971 .
[7] L. Berenbaum. Electromigration Damage of Grain‐Boundary Triple Points in Al Thin Films , 1971 .
[8] I. Ames,et al. Reduction of electromigration in aluminum films by copper doping , 1970 .
[9] R. Rosenberg,et al. Electromigration Damage in Aluminum Film Conductors , 1970 .
[10] E. S. Meieran,et al. Electromigration in Thin Al Films , 1969 .
[11] Robert Rosenberg,et al. RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMS , 1968 .
[12] R. Swalin,et al. Thermodynamics of solids , 1962 .
[13] A. Nowick,et al. Calculation of entropies of solute atoms from solid solubilities , 1958 .
[14] R. Rosenberg. Mechanisms of Electromigration Damage in Metallic Thin Films , 1972 .
[15] J. Sage. Parallel Pumping of Phonons in Yttrium Iron Garnet at 114 MHz , 1971 .