论文信息 - Compact InAlAs–InGaAs Metal– Semiconductor– Metal Photodetectors Integrated on Silicon-on-Insulator Waveguides

Compact InAlAs–InGaAs Metal– Semiconductor– Metal Photodetectors Integrated on Silicon-on-Insulator Waveguides

We present measurement results of compact and efficient InAlAs-InGaAs metal-semiconductor-metal photodetectors integrated on silicon-on-insulator (SOI) waveguides. These thin-film devices are heterogeneously integrated on the SOI substrate by means of low-temperature die-to-wafer bonding using divinyldisiloxane benzocyclobutene (DVS-BCB). The responsivity of a 30-mum-long detector is 1.0 A/W at a wavelength of 1550 nm and the dark current is 4.5 nA at a bias voltage of 5 V.

[1] Wim Bogaerts,et al. Integration of InP/InGaAsP photodetectors onto silicon-on-insulator waveguide circuits. , 2005, Optics express.

[2] G. Roelkens,et al. Thin-Film III-V Photodetectors Integrated on Silicon-on-Insulator Photonic ICs , 2007, Journal of Lightwave Technology.

[3] P. Dumon,et al. Basic structures for photonic integrated circuits in Silicon-on-insulator. , 2004, Optics express.

[4] P. Fay,et al. High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers , 1997, IEEE Photonics Technology Letters.

[5] R. Baets,et al. Thin-Film III-V Photodetectors Integrated on , 2007 .

[6] John E. Bowers,et al. Integrated AlGaInAs-silicon evanescent race track laser and photodetector. , 2007 .

[7] B. Jalali,et al. Silicon Photonics , 2006, Journal of Lightwave Technology.

[8] M. Smit,et al. Adhesive Bonding of InP ∕ InGaAsP Dies to Processed Silicon-On-Insulator Wafers using DVS-bis-Benzocyclobutene , 2006 .

[9] D. Taillaert,et al. A compact two-dimensional grating coupler used as a polarization splitter , 2003, IEEE Photonics Technology Letters.

[10] R Baets,et al. Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit. , 2006, Optics express.