论文信息 - Scaling of split-gate flash memory and its adoption in modern embedded non-volatile applications

Scaling of split-gate flash memory and its adoption in modern embedded non-volatile applications

This paper discusses the scaling of the third generation split-gate (SG) SuperFlash® memory technology (ESF3) from 90nm to 28nm nodes with the demonstration of performance and reliability of multi-megabit arrays embedded in various foundry baseline logic processes. Despite aggressive scaling of the cell size, the performance and reliability of the memory array are not compromised. This technology therefore continues to enable a wide range of modern embedded non-volatile applications such as smartcard devices that require very high endurance and low power, automotive microcontrollers that require zero data retention error with fast access time, and the Internet of Things (IoT) devices that require extremely low power consumption.

Nhan Do

[1] Hyosang Lee,et al. A 45-nm logic compatible 4Mb-split-gate embedded flash with 1M-cycling-endurance , 2014, 2014 IEEE 6th International Memory Workshop (IMW).

[2] Nhan Do,et al. A 55 nm Logic-Process-Compatible, Split-Gate Flash Memory Array Fully Demonstrated at Automotive Temperature with High Access Speed and Reliability , 2015, 2015 IEEE International Memory Workshop (IMW).

[3] A. Kotov,et al. Floating-Gate Corner-Enhanced Poly-to-Poly Tunneling in Split-Gate Flash Memory Cells , 2012, IEEE Transactions on Electron Devices.