Estimation of the displacement threshold energies in Si and GaAs by means of ion sputtering of structures with thin marker layers

The combined experimental and computer simulation technique for the estimation of the displacement threshold energies of impurity atoms in materials has been developed. The technique is based on SIMS sputtering profiling of structures with thin impurity marker layers and computer simulation of this process. Using this technique the displacement threshold energies of Al atoms in GaAs matrix and Sb atoms in Si matrix have been estimated.