论文信息 - Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs - 字舞流文

Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs

N. Collaert | E. Simoen | C. Claeys | P. Leroux | N. Lukyanchikova | M. Uffelen | S. Put | Harsh Mehta