Development of a Novel Integrated X-band Low Noise Ampl ifier

Low temperature co fired ceramic s (LTCC) and flip chip (FC) are excellent packaging and interconnection technologi es for realizing miniature and high reliable microwave modules. The LTCC microwa ve multilayer interconnection substrates with embedded resistors and MMIC flip c hip attachment technologies were studied in this paper to develop high density a nd integrated X band low noise amplifier (LNA) with samll volume, light weight a nd good microwave performances. Some critical parameters of packaging and interc onnection of the integrated LNA were simulated and optimized by using commercial 3D electromagnetic field analysis software HFSS. The bandwidth, gain, noise fig ure and input/output VSWR of the integrated X band LNA are 1 6 GHz, more than 2 8 dB, less than 2 dB and less than 1 8 respectively. The volume of the LNA is o nly 12×6×1 5 mm 3.