LC-oscillators above 100 GHz in silicon-based technology

In this paper, voltage-controlled LC-oscillators (VCO) are presented, reaching oscillation frequencies well above 100 GHz. The oscillators were fabricated in a 200 GHz SiGe:C BiCMOS technology with 0.25 /spl mu/m minimum feature size. In the design of the VCOs, two approaches for the frequency tuning of the oscillators were investigated. In the first design, the current flowing through the oscillator core was varied to get control of the output frequency. In the second design, a MOS-type varicap was used to tune the frequency of the LC-oscillator. The fabricated oscillators have a tuning range from 105.8 GHz to 114.5 GHz and from 113.2 GHz to 117.2 GHz, respectively.

[1]  D. Knoll,et al.  Novel collector design for high-speed SiGe:C HBTs , 2002, Digest. International Electron Devices Meeting,.

[2]  Hans-Martin Rein,et al.  SiGe VCOs operating up to 88 GHz, suitable for automotive radar sensors , 2003 .

[3]  B. Heinemann,et al.  60GHz and 76GHz oscillators in 0.25/spl mu/m SiGe:C BiCMOS , 2003, 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC..

[5]  W. Simburger,et al.  A 98 GHz voltage controlled oscillator in SiGe bipolar technology , 2003, 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440).