论文信息 - Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source - 字舞流文

Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source

V. L. Thanh | J. Murota | M. E. Kurdi | P. Boucaud | H. Rinnert | M. Stoffel | M. Dau | A. Ghrib | T. Le | V. Heresanu | T. Luong | M. A. Zrir | M. Petit | O. Abbes | Rachid Daineche | Omar Abbes