论文信息 - May the fourth (terminal) be with you - circuit design beyond FinFET

May the fourth (terminal) be with you - circuit design beyond FinFET

This paper presents our recent activities to demonstrate the potential of the fourth terminal of DG MOSFETs. The works presented in this paper are partly supported by JST (CREST Ultra Low Power Program) and NEDO (Nano-electronics Project and '09 ITRG Program).

[1] Hanpei Koike,et al. XDXMOS: a novel technique for the double-gate MOSFETs logic circuits - to achieve high drive current and small input capacitance together , 2005, Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005..

[2] T. Sekigawa,et al. Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate , 1984 .

[3] Meishoku Masahara,et al. Flex-Pass-Gate SRAM Design for Static Noise Margin Enhancement Using FinFET-Based Technology , 2007, 2007 IEEE Custom Integrated Circuits Conference.

[4] Hanpei Koike,et al. Preliminary Evaluation of Flex Power FPGA: A Power Reconfigurable Architecture with Fine Granularity , 2004, IEICE Trans. Inf. Syst..

[5] Meishoku Masahara,et al. Realization of 0.7-V analog circuits by adaptive-Vt operation of FinFET , 2010, IEEE Custom Integrated Circuits Conference 2010.

[6] Hanpei Koike,et al. Evaluation of granularity on threshold voltage control in flex power FPGA , 2006, 2006 IEEE International Conference on Field Programmable Technology.

[7] S. H. Rasouli,et al. Design Optimization of FinFET Domino Logic Considering the Width Quantization Property , 2010, IEEE Transactions on Electron Devices.