论文信息 - Analytical Threshold Voltage Model for Double-Gate MOSFETs With Localized Charges

Analytical Threshold Voltage Model for Double-Gate MOSFETs With Localized Charges

An analytical threshold voltage model for double-gate MOSFETs with localized charges is developed. From the 2-D Poisson's equation with parabolic potential approximation, a compact threshold voltage model is derived. The proposed model is then verified with a 2-D device simulator. The model can be used to investigate hot-carrier-induced device degradation for various device dimensions and various charge distributions.

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