论文信息 - Steady-State Versus Rapid Thermal Annealing of Phosphorusimplanted Pseudomorphic Si(100)/Ge 0.12 Si 0.88 - 字舞流文

Steady-State Versus Rapid Thermal Annealing of Phosphorusimplanted Pseudomorphic Si(100)/Ge 0.12 Si 0.88

N. D. Theodore | D. Kwong | M. Nicolet | Kang L. Wang | H. Kinoshita | F. Eisen | J. H. Song | D. Lie | T. Huang | T. Cams