A 16nm FinFet 19/39MHz 78/72dB DR noise-injected aggregated CTSDM ADC for configurable LTE advanced CCA/NCCA Application

A 39MHz bandwidth (BW) CTSDM ADC realized by aggregating two 19MHz BW CTSDM ADCs with a noise-injected technique is presented. The in-band noise is improved by 4.77dB by this technique. The ADC samples at 832MS/s, achieves 72dB DR in 39MHz BW and 78dB DR in 19MHz BW. This aggregated ADC is implemented in 16-nm FinFet technology with 0.23 mm2 active area and 6.2 mW per ADC, and thereby achieves FoMDR of 167.1dB in 39MHz BW, and FoMDR of 173.4dB in 19MHz BW.

[2]  P ? ? ? ? ? ? ? % ? ? ? ? , 1991 .

[3]  Ping Chen,et al.  A 28fJ/conv-step CT ΔΣ modulator with 78dB DR and 18MHz BW in 28nm CMOS using a highly digital multibit quantizer , 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

[4]  Stacy Ho,et al.  A 23mW, 73dB dynamic range, 80MHz BW continuous-time delta-sigma modulator in 20nm CMOS , 2014, 2014 Symposium on VLSI Circuits Digest of Technical Papers.

[5]  Hung-Chieh Tsai,et al.  A 75.1dB SNDR 840MS/s CT ΔΣ modulator with 30MHz bandwidth and 46.4fJ/conv FOM in 55nm CMOS , 2013, 2013 Symposium on VLSI Circuits.

[6]  Richard Schreier,et al.  29.2 A 235mW CT 0-3 MASH ADC achieving −167dBFS/Hz NSD with 53MHz BW , 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).