Performance Analysis of GaN-based Converter with Integrated Magnetics

Increase in the use of DC-consuming electronic devices and renewable energy sources in daily applications necessitates significant improvements to power conversion and distribution methodologies. DC-DC converters form an integral part of such systems and improvements to overall efficiency, reduction of volume, weight and cost are of utmost interest. Thus, a lot of research efforts are targeted towards identifying each source of loss and attempting to reduce it, thereby improving the associated power electronics. This paper discusses the use of Gallium Nitride (GaN) high electron mobility transistors (HEMT) as switch in a variant of traditional buck-boost topology with integrated magnetics. This combination has several benefits when used together but has not been studied extensively due to the complexity of the associated design and modeling aspects. The modeling of such a converter is described, performance analysis is carried out using MATLAB/Simulink and PLECS, and the comparison with silicon-based converter is presented.

[1]  Krishna Shenai,et al.  Future Prospects of Widebandgap (WBG) Semiconductor Power Switching Devices , 2015, IEEE Transactions on Electron Devices.

[2]  Kenneth L. Shepard,et al.  Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC–DC Multiphase Buck Converter , 2017, IEEE Journal of Solid-State Circuits.

[3]  S. Bahl,et al.  Advantages of GaN in a high-voltage resonant LLC converter , 2014, Applied Power Electronics Conference.

[4]  Xueqiang Zhang,et al.  An experimental comparison of GaN, SiC and Si switching power devices , 2017, IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society.

[5]  Robert D. Lorenz,et al.  A transient core loss analysis of multiple-gap inductor designed for the 2010 Prius , 2014, 2014 IEEE Energy Conversion Congress and Exposition (ECCE).

[6]  Dan Li,et al.  Over 300kHz GaN device based resonant bidirectional DCDC converter with integrated magnetics , 2016, 2016 IEEE Applied Power Electronics Conference and Exposition (APEC).

[7]  Ned Mohan,et al.  Equivalent Modeling, Design and Analysis of Integrated Magnetics Ćuk Converter , 2019, 2019 North American Power Symposium (NAPS).

[8]  Dong-Hyun Lee,et al.  A study on the loss model and characteristic comparison of three-level converter and full-bridge converter through the conduction loss analysis of power devices , 2004, 30th Annual Conference of IEEE Industrial Electronics Society, 2004. IECON 2004.

[9]  Ned Mohan,et al.  Analysis of Current Ripple in Ćuk Converter Topologies - A Novel Approach , 2018, 2018 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES).

[10]  J. Lai,et al.  Dead time optimization through loss analysis of an active-clamp flyback converter utilizing GaN devices , 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

[11]  Wensong Yu,et al.  Loss analysis of GaN devices in an isolated bidirectional DC-DC converter , 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

[12]  J. Strydom,et al.  Evaluation of Gallium Nitride Transistors in High Frequency Resonant and Soft-Switching DC–DC Converters , 2015, IEEE Transactions on Power Electronics.

[13]  Vahid Dargahi,et al.  Analytical Determination of Conduction and Switching Power Losses in Flying-Capacitor-Based Active Neutral-Point-Clamped Multilevel Converter , 2016, IEEE Transactions on Power Electronics.

[14]  Radoslava Mitova,et al.  Investigations of 600-V GaN HEMT and GaN Diode for Power Converter Applications , 2014, IEEE Transactions on Power Electronics.