A bulk-driven pixel circuit with wide data voltage range for OLEDoS microdisplays

A nanoampere current pixel circuit is proposed for organic light emitting diode-on-silicon (OLEDoS) microdisplays. The pixel circuit consists of four p-type MOSFETs and one storage capacitor. The proposed pixel circuit employs the bulk-driven technique as driving transistor to achieve wide input data voltage range and nanoampere (nA) current. This pixel circuit design is based on standard 0.18μm 1P5M CMOS process. Each subpixel layout occupies an area of 5μm×15μm. Hspice simulation results indicates that the ratio of input data voltage range to supply voltage is 78.82%.