Analysis of GaN based high‐power diode lasers after singular degradation events
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[1] Thomas Elsaesser,et al. Kinetics of catastrophic optical damage in GaN-based diode lasers , 2015 .
[2] Thomas Elsaesser,et al. Defect evolution during catastrophic optical damage of diode lasers , 2011 .
[3] P. G. Eliseev,et al. Optical strength of semiconductor laser materials , 1996 .
[4] Thomas Elsaesser,et al. Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers , 2011 .
[5] Aland K. Chin,et al. Fault protection of broad-area laser diodes , 2009, LASE.
[6] J. W. Tomm,et al. Microscopic Origins of Catastrophic Optical Damage in Diode Lasers , 2013, IEEE Journal of Selected Topics in Quantum Electronics.
[7] Georg Bruederl,et al. GaInN laser diodes from 440 to 530nm: a performance study on single-mode and multi-mode R&D designs , 2017, OPTO.
[8] C. Henry,et al. Catastrophic damage of AlxGa1−xAs double‐heterostructure laser material , 1979 .
[9] Y.J. Park,et al. Single-mode blue-violet laser diodes with low beam divergence and high COD level , 2006, IEEE Photonics Technology Letters.
[10] Thomas Elsaesser,et al. Short‐wavelength infrared defect emission as a probe of degradation processes in 980 nm single‐mode diode lasers , 2014 .
[11] Thomas Elsaesser,et al. Near-field dynamics of broad area diode laser at very high pump levels , 2011 .
[12] S. H. Choy,et al. Dielectric behavior and microstructure of (Bi[sub ½]Na[sub ½])TiO₃-(Bi[sub ½]K[sub ½])TiO₃-BaTiO₃ lead-free piezoelectric ceramics , 2005 .
[13] Qiang Zhang,et al. Unveiling laser diode “fossil” and the dynamic analysis for heliotropic growth of catastrophic optical damage in high power laser diodes , 2016, Scientific Reports.
[14] D. Cooper,et al. Internal self-damage of gallium arsenide lasers , 1966 .
[15] Alfred Lell,et al. Facet degradation of GaN heterostructure laser diodes , 2005 .
[16] M. Vanzi,et al. Side-Mode Excitation in Single-Mode Laser Diodes , 2016, IEEE Transactions on Device and Materials Reliability.
[17] Thomas Elsaesser,et al. Nano-optical analysis of GaN-based diode lasers , 2014 .
[18] Piotr Perlin,et al. High-power laser structures grown on bulk GaN crystals , 2004 .
[19] Oliver Ambacher,et al. Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition , 1996 .
[20] Daniel D. Koleske,et al. GaN decomposition in H2 and N2 at MOVPE temperatures and pressures , 2001 .
[21] T. Elsaesser,et al. Time‐resolved reconstruction of defect creation sequences in diode lasers , 2012 .
[22] Wlodzimierz Nakwaski,et al. Thermal model of the catastrophic degradation of high-power stripe-geometry GaAs/(AlGa)As double-heterostructure diode lasers , 1990 .