Analysis of GaN based high‐power diode lasers after singular degradation events

Damage patterns caused by the Catastrophic Optical Damage (COD) are analyzed in GaN-based high-power diode lasers. In contrast to standard failure analysis, the devices are intentionally degraded under well-defined conditions. We find that defect growth during COD is fed by the optical mode, that is, laser energy. This process involves melting and even vaporization of quantum-well and waveguide materials. Average defect propagation velocities along the laser axis of 110 m s−1 are observed. COD results in material loss including the formation of an empty channel. This is well consistent with material loss due to ejections of hot material out of the front facet of the device. The laser structure in the immediate vicinity of the empty channel seems to be absolutely undisturbed and no transition regions or remaining material are observed. These results are compared with earlier findings from comparable experiments obtained with GaAs-based devices.

[1]  Thomas Elsaesser,et al.  Kinetics of catastrophic optical damage in GaN-based diode lasers , 2015 .

[2]  Thomas Elsaesser,et al.  Defect evolution during catastrophic optical damage of diode lasers , 2011 .

[3]  P. G. Eliseev,et al.  Optical strength of semiconductor laser materials , 1996 .

[4]  Thomas Elsaesser,et al.  Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers , 2011 .

[5]  Aland K. Chin,et al.  Fault protection of broad-area laser diodes , 2009, LASE.

[6]  J. W. Tomm,et al.  Microscopic Origins of Catastrophic Optical Damage in Diode Lasers , 2013, IEEE Journal of Selected Topics in Quantum Electronics.

[7]  Georg Bruederl,et al.  GaInN laser diodes from 440 to 530nm: a performance study on single-mode and multi-mode R&D designs , 2017, OPTO.

[8]  C. Henry,et al.  Catastrophic damage of AlxGa1−xAs double‐heterostructure laser material , 1979 .

[9]  Y.J. Park,et al.  Single-mode blue-violet laser diodes with low beam divergence and high COD level , 2006, IEEE Photonics Technology Letters.

[10]  Thomas Elsaesser,et al.  Short‐wavelength infrared defect emission as a probe of degradation processes in 980 nm single‐mode diode lasers , 2014 .

[11]  Thomas Elsaesser,et al.  Near-field dynamics of broad area diode laser at very high pump levels , 2011 .

[12]  S. H. Choy,et al.  Dielectric behavior and microstructure of (Bi[sub ½]Na[sub ½])TiO₃-(Bi[sub ½]K[sub ½])TiO₃-BaTiO₃ lead-free piezoelectric ceramics , 2005 .

[13]  Qiang Zhang,et al.  Unveiling laser diode “fossil” and the dynamic analysis for heliotropic growth of catastrophic optical damage in high power laser diodes , 2016, Scientific Reports.

[14]  D. Cooper,et al.  Internal self-damage of gallium arsenide lasers , 1966 .

[15]  Alfred Lell,et al.  Facet degradation of GaN heterostructure laser diodes , 2005 .

[16]  M. Vanzi,et al.  Side-Mode Excitation in Single-Mode Laser Diodes , 2016, IEEE Transactions on Device and Materials Reliability.

[17]  Thomas Elsaesser,et al.  Nano-optical analysis of GaN-based diode lasers , 2014 .

[18]  Piotr Perlin,et al.  High-power laser structures grown on bulk GaN crystals , 2004 .

[19]  Oliver Ambacher,et al.  Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition , 1996 .

[20]  Daniel D. Koleske,et al.  GaN decomposition in H2 and N2 at MOVPE temperatures and pressures , 2001 .

[21]  T. Elsaesser,et al.  Time‐resolved reconstruction of defect creation sequences in diode lasers , 2012 .

[22]  Wlodzimierz Nakwaski,et al.  Thermal model of the catastrophic degradation of high-power stripe-geometry GaAs/(AlGa)As double-heterostructure diode lasers , 1990 .