Extraction of the channel thermal noise in MOSFETs

An extraction method to obtain the channel thermal noise in MOSFETs directly from DC, scattering parameter and RF noise measurements is presented. In this extraction method, the transconductance (g/sub m/), output resistance (R/sub DS/), and source and drain resistances (R/sub S/ and R/sub D/) are obtained from DC measurements. The gate resistance (R/sub G/) is extracted from scattering-parameter measurements, and the equivalent noise resistance (R/sub n/) is obtained from RF noise measurements. This method has been verified by using the measured data of a 0.36 /spl mu/m n-type MOSFET up to 18 GHz.

[1]  A.A. Abidi,et al.  High-frequency noise measurements on FET's with small dimensions , 1986, IEEE Transactions on Electron Devices.

[2]  M. J. Deen,et al.  High frequency noise of MOSFETs. II. Experiments , 1998 .

[3]  T. Manku,et al.  Quasi-3D device simulation for microwave noise characterization of MOS devices , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[4]  S. H. Jen,et al.  Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz , 1999 .

[5]  T.H. Lee,et al.  A 1.5 V, 1.5 GHz CMOS low noise amplifier , 1996, 1996 Symposium on VLSI Circuits. Digest of Technical Papers.

[6]  M. J. Deen,et al.  High frequency noise of MOSFETs I Modeling , 1998 .

[7]  A. A. Abidi,et al.  CMOS-only rf and baseband circuits for a monolithic 900 MHz wireless transceiver , 1996, Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting.

[8]  M. J. Deen,et al.  Direct calculation of metal–oxide–semiconductor field effect transistor high frequency noise parameters , 1998 .

[9]  G. Ghione,et al.  Physics-based RF noise modeling of submicron MOSFETs , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).