关于源/漏与背栅共享接触的FDSOI-CMOS器件仿真

In this paper, a new ultra-thin fully-depleted SOI CMOS structure with sharing contact between source/drain and back gate is presented to save area and increase threshold voltage tuning capability. TCAD simulations are used to investigate the back-gate effect on the ultra-thin SOI CMOS., A new process flow to make the fully-depleted SOI CMOS structures is also proposed.