论文信息 - Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ Films

Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ Films

Surface antireflectance and passivation properties of the Al2O3 films deposited on Czochralski Si wafers by atomic layer deposition (ALD) are investigated. Textured Si with 100-nm Al2O3 shows a very low average reflectance of ~2.8%. Both p- and n-type Si wafers are well passivated by Al2O3 films. The maximal minority carrier lifetimes are improved from ~10 μs before Al2O3 passivation to above 3 ms for both p- and n-type Si after Al2O3 film deposition and annealing at an appropriate temperature. Hence, an ALD-deposited Al2O3 film shows the dual function of antireflectance and surface passivation for solar cell applications.

Hong Liang Zhang | L. Zhu | Qing Wan | Z. Yan | Xiang Li

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