Mass Spectrometric and Langmuir Probe Measurements in Inductively Coupled Plasmas in Ar, CHF3/Ar and CHF3/Ar/O2 Mixtures

Absolute fluxes and energy distributions of ions in inductively coupled plasmas of Ar, CHF 3 /Ar, and CHF 3 /Ar/O 2 have been measured. These plasmas were generated in a gaseous electronics conference cell modified for inductive coupling at pressures of 10-50 mTorr and 100-300 W of 13.56 MHz radio frequency (RF) power in various feed gas mixtures. In pure Ar plasmas, the Ar + flux increases linearly with pressure as well as RF power. In mixtures, the Ar + flux decreases with increase in pressure and CHF 3 concentration in the mixture. The loss mechanism for Ar + is attributed to resonance charge exchange (Ar + + CHF 3 → products). Total ion flux in CHF 3 mixtures decreases with increase in pressure and also CHF 3 concentration. Relative ion fluxes observed in the present studies are analysed with the help of available cross sections for electron impact ionization and charge-exchange ion-molecule reactions. Measurements of plasma potential, electron and ion number densities, electron energy distribution function, and mean electron energy have also been made in the centre of the plasma with an RF-compensated Langmuir probe. Plasma potential values are compared with the mean ion energies determined from the measured ion energy distributions and are consistent. Electron temperature, plasma potential, and mean ion energy vary inversely with pressure, but increase with CHF 3 content in the mixture.

[1]  E. Benck,et al.  Comparison of electron density measurements in planar inductively coupled plasmas by means of the plasma oscillation method and Langmuir probes , 1998 .

[2]  Vincent M. Donnelly,et al.  The design of plasma etchants , 1981 .

[3]  Masaru Hori,et al.  Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma. II. H2 addition to electron cyclotron resonance plasma employing CHF3 , 1996 .

[4]  M. Lieberman,et al.  Model and measurements for a planar inductive oxygen discharge , 1998 .

[5]  D. Manos,et al.  Plasma etching : an introduction , 1989 .

[6]  H. Shindo,et al.  High Rate and Highly Selective SiO2 Etching Employing Inductively Coupled Plasma , 1994 .

[7]  Vincent M. Donnelly,et al.  Basic chemistry and mechanisms of plasma etching , 1983 .

[8]  J. Coburn,et al.  Positive‐ion bombardment of substrates in rf diode glow discharge sputtering , 1972 .

[9]  D. C. Meister,et al.  Ion energy and angular distributions in inductively coupled radio frequency discharges in argon , 1996 .

[10]  S. Samukawa Highly Selective and Highly Anisotropic SiO2 Etching in Pulse-Time Modulated Electron Cyclotron Resonance Plasma , 1994 .

[11]  K. Maruyama,et al.  Measurement of the CF3 radical using infrared diode laser absorption spectroscopy , 1993 .

[12]  G. Oehrlein,et al.  Silicon etching mechanisms in a CF4/H2 glow discharge , 1987 .

[13]  M. Bowers,et al.  Mechanism of thermal energy charge transfer reactions: He+−, Ne+−, Ar+−, Kr+−, Xe+−, N2+−, CO+−, CO2+−, and N2O+− reacting with CH3F, CH2F2, CHF3 and CF4 , 1977 .

[14]  Marc Schaepkens,et al.  Mass spectrometric measurements on inductively coupled fluorocarbon plasmas: Positive ions, radicals and endpoint detection , 1999 .

[15]  I. Bello,et al.  X‐ray photoelectron spectroscopy study of low energy CF+ ion interactions with silicon , 1993 .

[16]  R. Jayaraman,et al.  Ion and neutral species in C2F6 and CHF3 dielectric etch discharges , 1999 .

[17]  T. Standaert,et al.  Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas , 1998 .

[18]  J. Coburn In situ Auger electron spectroscopy of Si and SiO2 surfaces plasma etched in CF4‐H2 glow discharges , 1979 .

[19]  M. Inoue,et al.  Experimental and Theoretical Study of the Charge Build-Up in an ECR Etcher , 1990 .

[20]  K. Tachibana,et al.  Investigations of the surface chemistry of silicon substrates etched in a rf-biased inductively coupled fluorocarbon plasma using Fourier-transform infrared ellipsometry , 1998 .

[21]  L. Mahoney,et al.  Electron‐density and energy distributions in a planar inductively coupled discharge , 1994 .

[22]  David L. McFadden,et al.  Gas-phase atom-radical kinetics of atomic hydrogen reactions with trifluoromethyl, difluoromethylene, and fluoromethylidyne radicals , 1989 .

[23]  N. R. Rueger,et al.  Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor , 1999 .

[24]  M. Meyyappan,et al.  A Continuum Model for the Inductively Coupled Plasma Reactor in Semiconductor Processing , 1999 .

[25]  L. Overzet Microwave Diagnostic Results from the Gaseous Electronics Conference RF Reference Cell , 1995, Journal of research of the National Institute of Standards and Technology.

[26]  A. Lichtenberg,et al.  Modelling electronegative discharges at low pressure , 1996 .

[27]  P. Haaland,et al.  Ion chemistry in trifluoromethane, CHF3 , 1997 .

[28]  U. Kortshagen,et al.  Ion energy distribution functions in a planar inductively coupled RF discharge , 1995 .

[29]  Gregory A. Hebner,et al.  An Inductively Coupled Plasma Source for the Gaseous Electronics Conference RF Reference Cell , 1995, Journal of research of the National Institute of Standards and Technology.

[30]  Ion Cristian Abraham,et al.  SiO2 to Si selectivity mechanisms in high density fluorocarbon plasma etching , 1996 .

[31]  G. Oehrlein,et al.  Reactive Ion Etching of Silicon and Silicon Dioxide in CF 4 Plasmas Containing H 2 or C 2 F 4 Additives , 1991 .

[32]  M. Hopkins,et al.  Langmuir probe measurements of the electron energy distribution function in radio‐frequency plasmas , 1992 .

[33]  Mark J. Kushner,et al.  Surface kinetics and plasma equipment model for Si etching by fluorocarbon plasmas , 2000 .

[34]  Neal R. Rueger,et al.  Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing , 1999 .