Thermal effect of annealing-temperature on solution-processed high-k ZrO2 dielectrics

In this paper, a solution-processed zirconium oxide (ZrO2) dielectric was deposited by spin coating with varying pre-annealing temperatures and post-annealing temperatures. The thermal effect of the pre-annealing and post-annealing process on the structural and electrical properties of ZrO2 films was investigated. The result shows that the pre-annealing process had a significant impact on the relative porosity and internal stress of ZrO2 film. A pre-annealing process with a low temperature could not effectively remove the residual solvent, while a high pre-annealing temperature would lead to large internal stress. As for post-annealing temperature, it was found that the post-annealing process can not only reduce internal defects of the ZrO2 dielectric, but also optimize the interface between the semiconductor and dielectric by lowering the surface defects of the ZrO2 film. Finally, the TFT with a pre-annealing temperature of 200 °C and post-annealing temperature of 400 °C showed optimized performance, with a mobility of 16.34 cm2 (V s)−1, an Ion/Ioff of 2.08 × 106, and a subthreshold swing (SS) of 0.17 V dec−1.

[1]  C. Hu,et al.  Effects of Annealing on Ferroelectric Hafnium–Zirconium–Oxide-Based Transistor Technology , 2019, IEEE Electron Device Letters.

[2]  Junbiao Peng,et al.  Bias stability enhancement in thin-film transistor with a solution-processed ZrO2 dielectric as gate insulator , 2018 .

[3]  Junbiao Peng,et al.  Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors , 2018 .

[4]  R. L. Peterson,et al.  Effect of relative humidity and pre-annealing temperature on spin-coated zinc tin oxide films made via the metal–organic decomposition route , 2017 .

[5]  Junbiao Peng,et al.  A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO2 Gate Insulator TFT with a High Concentration Precursor , 2017, Materials.

[6]  Yeon-Wha Oh,et al.  Pre-Annealing Effect for Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistors , 2017 .

[7]  Myung‐Han Yoon,et al.  Sol-gel metal oxide dielectrics for all-solution-processed electronics , 2017 .

[8]  E. Fortunato,et al.  Low-temperature, nontoxic water-induced high-k zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors , 2016 .

[9]  Miao Xu,et al.  A novel nondestructive testing method for amorphous Si–Sn–O films , 2016 .

[10]  K. Sangsoo,et al.  Dielectric Properties of Solution-Processed ZrO 2 for Thin-Film Transistors , 2016 .

[11]  S. Doğan,et al.  An investigation of the Nb doping effect on structural, morphological, electrical and optical properties of spray deposited F doped SnO2 films , 2013 .

[12]  J. Oh,et al.  Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric. , 2013, ACS applied materials & interfaces.

[13]  W. Zhou,et al.  High performance self-aligned top-gate ZnO thin film transistors using sputtered Al2O3 gate dielectric☆ , 2012 .

[14]  J. D. Wu,et al.  Structural, optical and electrical properties of high-k ZrO2 dielectrics on Si prepared by plasma assisted pulsed laser deposition , 2012 .

[15]  Dong Lim Kim,et al.  Improved electrical performance of an oxide thin-film transistor having multistacked active layers using a solution process. , 2012, ACS applied materials & interfaces.

[16]  Mingzhi Dai,et al.  Anomalous bias-stress-induced unstable phenomena of InZnO thin-film transistors using Ta2O5 gate dielectric , 2012 .

[17]  S. Chang,et al.  Room temperature fabricated transparent amorphous indium zinc oxide based thin film transistor using high-κ HfO2 as gate insulator , 2012 .

[18]  S. Yasuno,et al.  Correlation of photoconductivity response of amorphous In–Ga–Zn–O films with transistor performance using microwave photoconductivity decay method , 2011 .

[19]  Yu Huang,et al.  High‐Performance Top‐Gated Graphene‐Nanoribbon Transistors Using Zirconium Oxide Nanowires as High‐Dielectric‐Constant Gate Dielectrics , 2010, Advanced materials.

[20]  D. Choi,et al.  Room temperature fabrication Oxide TFT with Y2O3 as a gate oxide and Mo contact , 2009 .

[21]  Ramphal Sharma,et al.  Studies and correlation among the structural, optical and electrical parameters of spray-deposited tin oxide (SnO2) thin films with different substrate temperatures , 2008 .

[22]  H. Ohta,et al.  Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.

[23]  Chien-Yie Tsay,et al.  Solution processed amorphous InGaZnO semiconductor thin films and transistors , 2014 .

[24]  Jin-seong Park,et al.  Review of recent developments in amorphous oxide semiconductor thin-film transistor devices , 2012 .

[25]  E. Fortunato,et al.  Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances , 2012, Advanced materials.