Recent progress in optoelectric integrated circuits (OEIC's)
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Osamu Wada | T. Nakagami | T. Sakurai | O. Wada | T. Nakagami | T. Sakurai
[1] Integrated quantum-well-laser transmitter compatible with ion-implanted GaAs integrated circuits , 1984 .
[2] Amnon Yariv,et al. A monolithically integrated optical repeater , 1979 .
[3] Kam Y. Lau,et al. Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices , 1982 .
[4] H. Beneking. On the response behavior of fast photoconductive optical planar and coaxial semiconductor detectors , 1982, IEEE Transactions on Electron Devices.
[5] H. Serizawa,et al. A planar InGaAs PIN/JFET fiber-optic detector , 1985, IEEE Journal of Quantum Electronics.
[6] O. Wada,et al. Monolithic integration of an AlGaAs/GaAs DH LED with a GaAs FET driver , 1982, IEEE Electron Device Letters.
[7] Hiroyuki Serizawa,et al. Operation principle of the InGaAsP/InP laser transistor , 1985 .
[8] Kenichi Iga,et al. GaInAsP/InP stripe‐geometry laser with a reactive‐ion‐etched facet , 1980 .
[9] A. Y. Cho,et al. Bias‐free selectively doped AlxGa1−x As‐GaAs picosecond photodetectors , 1982 .
[10] F.J. Leonberger,et al. Optical interconnections for VLSI systems , 1984, Proceedings of the IEEE.
[11] R. B. Lauer,et al. 15 GHz direct modulation bandwidth of vapour-phase regrown 1.3 μm InGaAsP buried-heterostructure lasers under CW operation at room temperature , 1985 .
[12] Amnon Yariv,et al. Monolithic integration of an injection laser and a metal semiconductor field effect transistor , 1979 .
[13] Osamu Wada,et al. GRIN-SCH SQW laser/photodiode array by improved microcleaved facet process , 1985 .
[14] Kenya Nakai,et al. Monolithic integration of a pin photodiode and a field‐effect transistor using a new fabrication technique—graded step process , 1985 .
[15] T. Sugeta,et al. WP-B2 high-gain metal—Semiconductor—Metal photodetectors for high-speed optoelectronic circuits , 1979, IEEE Transactions on Electron Devices.
[16] James N. Walpole,et al. Surface-emitting GaInAsP/InP laser with low threshold current and high efficiency , 1985 .
[17] H. Schumacher,et al. The DSI diode—A fast large-area optoelectronic detector , 1985, IEEE Transactions on Electron Devices.
[18] C. S. Hong,et al. GaAs/GaAlAs Integrated Optoelectronics For Optical Interconnect Applications , 1984, Photonics West - Lasers and Applications in Science and Engineering.
[19] A. Suzuki,et al. Monolithically integrated In0.53Ga0.47As-PIN/InP-MISFET photoreceiver , 1983, 1983 International Electron Devices Meeting.
[20] T. Ishida,et al. GaAs MESFET ring oscillator on Si substrate , 1985, IEEE Transactions on Electron Devices.
[21] V. Diadiuk,et al. Lateral photodetectors on semi‐insulating InGaAs and InP , 1985 .
[22] Osamu Wada,et al. Very low threshold current ridge-waveguide AlGaAs/GaAs single-quantum-well lasers , 1985 .
[23] Kam Y. Lau,et al. Very high frequency GaAlAs laser field‐effect transistor monolithic integrated circuit , 1982 .
[24] G. Kano,et al. A new chemical etching technique for formation of cavity facets of (GaAl)As lasers , 1985, IEEE Journal of Quantum Electronics.
[25] H. Machida,et al. A New Fabrication Technique for Optoelectronic Integrated Circuits (OEIC's) — The Graded‐Step Process — Applied to the Fabrication of AlGaAs / GaAs PIN/FET and PIN/Amplifier Photoreceivers , 1985 .
[26] A. Yariv,et al. Ultra-high speed semiconductor lasers , 1985 .
[27] Hiroshi Arimoto,et al. Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide , 1985 .
[28] Charles W. Tu,et al. Monolithic integrated receiver front end consisting of a photoconductive detector and a GaAs selectively doped heterostructure transistor , 1985 .
[29] J. Hayashi,et al. Gigabit per second operation by monolithically integrated InGaAsP/InP LD-FET , 1984 .
[30] Kam Y. Lau,et al. 11‐GHz direct modulation bandwidth GaAlAs window laser on semi‐insulating substrate operating at room temperature , 1984 .
[31] Osamu Wada,et al. Monolithic PIN/preamplifier circuit integrated on a GaAs substrate , 1983 .
[32] K. Iga,et al. Chemically etched-mirror GaInAsP/InP lasers - Review , 1982, IEEE Journal of Quantum Electronics.
[33] C. Y. Chen,et al. High‐sensitivity Ga0.47In0.53As photoconductive detectors prepared by vapor phase epitaxy , 1984 .
[34] Osamu Wada,et al. AlGaAs/GaAs microcleaved facet (MCF) laser monolithically integrated with photodiode , 1982 .
[35] Robert D. Burnham,et al. Impurity-disordered, coupled-stripe Al(x)Ga(1-x)As-GaAs quantum well laser , 1985 .
[36] P. Tien. Integrated optics and new wave phenomena in optical waveguides , 1977 .
[37] Amnon Yariv,et al. AℓGaAs Lasers With Micro-cleaved Mirrors Suitable for Monolithic Integration , 1982, Topical Meeting on Integrated and Guided-Wave Optics.
[38] Q switching of low‐threshold buried‐heterostructure diode lasers at 10 GHz , 1984 .
[39] Hiroshi Okamoto,et al. Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption , 1985 .
[40] Larry A. Coldren,et al. Etched mirror and groove-coupled GaInAsP/InP laser devices for integrated optics , 1982 .
[41] Colin E. C. Wood,et al. Integrated double heterostructure Ga0.47In0.53As photoreceiver with automatic gain control , 1981, IEEE Electron Device Letters.
[42] Kam Y. Lau,et al. Monolithic optoelectronic integration of a GaAlAs laser, a field‐effect transistor, and a photodiode , 1984 .
[43] Nick Holonyak,et al. Continuous 300-K laser operation of strained superlattices , 1983 .
[44] M. Ito,et al. Monolithic integration of a metal—semiconductor—metal photodiode and a GaAs preamplifier , 1984, IEEE Electron Device Letters.
[45] Kiyoshi Asakawa,et al. GaAs and GaAlAs Equi-Rate Etching Using a New Reactive Ion Beam Etching System , 1983 .
[46] S. Sasaki,et al. GaAs optoelectronic integrated light sources , 1983 .
[47] H Matsueda,et al. Monolithic integration of a laser diode, photo monitor, and electric circuits on a semi-insulating GaAs substrate. , 1984, Applied optics.
[48] T. Ishikawa,et al. MBE growth of extremely high‐quality GaAs–AlGaAs GRIN‐SCH lasers with a superlattice buffer layer , 1985 .
[49] C. Y. Chen,et al. New minority hole sinked photoconductive detector , 1983 .
[50] M. Ito,et al. A monolithically integrated AlGaAs/GaAs p-i-n/FET Photoreceiver by MOCVD , 1983, IEEE Electron Device Letters.
[52] N. Bar-chaim,et al. GaAs integrated optoelectronics , 1982, IEEE Transactions on Electron Devices.
[53] Kenichi Kasahara,et al. Monolithically integrated In(0.53)Ga(0.47)As-PIN/InP-MISFET photoreceiver , 1984 .
[54] Takakiyo Nakagami,et al. Compact transmitter and receiver modules with optoelectronic-integrated circuits for optical LAN's , 1986 .
[55] Amnon Yariv,et al. A monolithic integration of GaAs/GaAlAs bipolar transistor and heterostructure laser , 1980 .
[56] Large‐signal dynamics of an ultrafast semiconductor laser at digital modulation rates approaching 10 Gbit/s , 1985 .
[57] Tadashi Fukuzawa,et al. Monolithic integration of a GaAlAs injection laser with a Schottky‐gate field effect transistor , 1980 .
[58] R. M. Kolbas,et al. Planar monolithic integration of a photodiode and a GaAs preamplifier , 1983 .
[59] Kenichi Iga,et al. Room‐temperature pulsed oscillation of GaAlAs/GaAs surface emitting injection laser , 1984 .
[60] Kenya Nakai,et al. AlGaAs/GaAs p‐i‐n photodiode/preamplifier monolithic photoreceiver integrated on a semi‐insulating GaAs substrate , 1985 .
[61] Y. Sasai,et al. Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors , 1984 .
[62] A. Yariv,et al. Integration of an injection laser with a Gunn oscillator on a semi‐insulating GaAs substrate , 1978 .
[63] A. Yariv,et al. The beginning of integrated optoelectronic circuits , 1984, IEEE Transactions on Electron Devices.
[64] T. H. Windhorn,et al. Room‐temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate , 1985 .
[65] O. Wada,et al. High performance ridge-waveguide AlGaAs/GaAs multiquantum-well lasers grown by molecular beam epitaxy , 1982, 1982 International Electron Devices Meeting.
[66] Osamu Wada,et al. AlGaAs/GaAs multiquantum-well (MQW) laser applied to monolithic integration with FET driver , 1983 .
[67] T. Terakado,et al. Monolithically integrated high-speed light source using 1.3-µm wavelength DFB-DC-PBH laser , 1986 .
[68] A. Yariv,et al. Bistable optical electrical/microwave switching using optically coupled monolithically integrated GaAlAs translasers , 1984 .
[69] Kenya Nakai,et al. Monolithic four-channel photodiode/amplifier receiver array integrated on a GaAs substrate , 1986 .
[70] H. Inaba,et al. Novel structure of laser diode and light-emitting diode realised by coaxial transverse junction (CTJ) , 1984 .
[71] Joseph M. Ballantyne,et al. An integrated photoconductive detector and waveguide structure , 1980 .
[72] R. E. Nahory,et al. Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver , 1980 .
[73] Amnon Yariv,et al. Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor , 1982 .
[74] I. Mito,et al. Lasing mode and spectral linewidth control by phase tunable distributed feedback laser diodes with double channel planar buried heterostructure (DFB-DC-PBH LD's) , 1985, IEEE Journal of Quantum Electronics.
[75] Osamu Wada,et al. Monolithic integration of a low threshold current quantum well laser and a driver circuit on a GaAs substrate , 1985 .
[76] Takakiyo Nakagami,et al. 400 Mbit/s transmission experiment using two monolithic optoelectronic chips , 1985 .
[77] Stewart E. Miller,et al. Integrated optics: An introduction , 1969 .
[78] Won-Tien Tsang,et al. Ultra-low threshold, graded-index waveguide, separate confinement, CW buried-heterostructure lasers , 1982 .
[79] Kenju Otsuka,et al. Dynamic behaviour of a GaAs-AlGaAs MQW laser diode , 1983 .
[80] U. Koren,et al. Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP , 1982 .
[81] Won-Tien Tsang,et al. Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy , 1982 .
[82] T. H. Windhorn,et al. AlGaAs double‐heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate , 1984 .
[83] A. Y. Cho,et al. Ultrahigh speed modulation‐doped heterostructure field‐effect photodetectors , 1983 .
[84] Anis Husain,et al. Optical Interconnect Of Digital Integrated Circuits And Systems , 1984, Photonics West - Lasers and Applications in Science and Engineering.
[85] L. Figueroa,et al. Frequency and pulse response of a novel high-speed interdigital surface photoconductor (IDPC) , 1981, IEEE Electron Device Letters.
[86] Naoki Chinone,et al. High Relaxation Oscillation Frequency (beyond 10 GHz) of GaAlAs Multiquantum Well Lasers , 1985 .
[87] D. Kasemset,et al. GaAs/GaAlAs selective MOCVD epitaxy and planar ion-implantation technique for complex integrated optoelectronic circuit applications , 1984, IEEE Electron Device Letters.
[88] Y. F. Lin,et al. Strained‐layer quantum‐well injection laser , 1984 .
[89] W. Tsang. Heterostructure semiconductor lasers prepared by molecular beam epitaxy , 1984 .
[90] Krishna C. Saraswat,et al. Effect of scaling of interconnections on the time delay of VLSI circuits , 1982 .
[91] Takakiyo Nakagami,et al. Compact transmitter module with a monolithic laser/driver circuit , 1985 .
[92] N. Bouadma,et al. Low threshold GaAs/GaAlAs BH lasers with ion-beam-etched mirrors , 1985 .