Recent progress in optoelectric integrated circuits (OEIC's)

Recent developments in both GaAs- and InP-based opto-electronic circuits (OEIC's) which incorporate both optoelectronic and electronic devices on the same semiconductor substrates will be discussed. Several key technologies required for optoelectronic integration and the present status of the technology are explained by reviewing some of OEIC transmitters and receivers that have been realized up to now. Possibilities of application of OEIC's and further technological challenges to enhance the advantages of OEIC's are discussed.

[1]  Integrated quantum-well-laser transmitter compatible with ion-implanted GaAs integrated circuits , 1984 .

[2]  Amnon Yariv,et al.  A monolithically integrated optical repeater , 1979 .

[3]  Kam Y. Lau,et al.  Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices , 1982 .

[4]  H. Beneking On the response behavior of fast photoconductive optical planar and coaxial semiconductor detectors , 1982, IEEE Transactions on Electron Devices.

[5]  H. Serizawa,et al.  A planar InGaAs PIN/JFET fiber-optic detector , 1985, IEEE Journal of Quantum Electronics.

[6]  O. Wada,et al.  Monolithic integration of an AlGaAs/GaAs DH LED with a GaAs FET driver , 1982, IEEE Electron Device Letters.

[7]  Hiroyuki Serizawa,et al.  Operation principle of the InGaAsP/InP laser transistor , 1985 .

[8]  Kenichi Iga,et al.  GaInAsP/InP stripe‐geometry laser with a reactive‐ion‐etched facet , 1980 .

[9]  A. Y. Cho,et al.  Bias‐free selectively doped AlxGa1−x As‐GaAs picosecond photodetectors , 1982 .

[10]  F.J. Leonberger,et al.  Optical interconnections for VLSI systems , 1984, Proceedings of the IEEE.

[11]  R. B. Lauer,et al.  15 GHz direct modulation bandwidth of vapour-phase regrown 1.3 μm InGaAsP buried-heterostructure lasers under CW operation at room temperature , 1985 .

[12]  Amnon Yariv,et al.  Monolithic integration of an injection laser and a metal semiconductor field effect transistor , 1979 .

[13]  Osamu Wada,et al.  GRIN-SCH SQW laser/photodiode array by improved microcleaved facet process , 1985 .

[14]  Kenya Nakai,et al.  Monolithic integration of a pin photodiode and a field‐effect transistor using a new fabrication technique—graded step process , 1985 .

[15]  T. Sugeta,et al.  WP-B2 high-gain metal—Semiconductor—Metal photodetectors for high-speed optoelectronic circuits , 1979, IEEE Transactions on Electron Devices.

[16]  James N. Walpole,et al.  Surface-emitting GaInAsP/InP laser with low threshold current and high efficiency , 1985 .

[17]  H. Schumacher,et al.  The DSI diode—A fast large-area optoelectronic detector , 1985, IEEE Transactions on Electron Devices.

[18]  C. S. Hong,et al.  GaAs/GaAlAs Integrated Optoelectronics For Optical Interconnect Applications , 1984, Photonics West - Lasers and Applications in Science and Engineering.

[19]  A. Suzuki,et al.  Monolithically integrated In0.53Ga0.47As-PIN/InP-MISFET photoreceiver , 1983, 1983 International Electron Devices Meeting.

[20]  T. Ishida,et al.  GaAs MESFET ring oscillator on Si substrate , 1985, IEEE Transactions on Electron Devices.

[21]  V. Diadiuk,et al.  Lateral photodetectors on semi‐insulating InGaAs and InP , 1985 .

[22]  Osamu Wada,et al.  Very low threshold current ridge-waveguide AlGaAs/GaAs single-quantum-well lasers , 1985 .

[23]  Kam Y. Lau,et al.  Very high frequency GaAlAs laser field‐effect transistor monolithic integrated circuit , 1982 .

[24]  G. Kano,et al.  A new chemical etching technique for formation of cavity facets of (GaAl)As lasers , 1985, IEEE Journal of Quantum Electronics.

[25]  H. Machida,et al.  A New Fabrication Technique for Optoelectronic Integrated Circuits (OEIC's) — The Graded‐Step Process — Applied to the Fabrication of AlGaAs / GaAs PIN/FET and PIN/Amplifier Photoreceivers , 1985 .

[26]  A. Yariv,et al.  Ultra-high speed semiconductor lasers , 1985 .

[27]  Hiroshi Arimoto,et al.  Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide , 1985 .

[28]  Charles W. Tu,et al.  Monolithic integrated receiver front end consisting of a photoconductive detector and a GaAs selectively doped heterostructure transistor , 1985 .

[29]  J. Hayashi,et al.  Gigabit per second operation by monolithically integrated InGaAsP/InP LD-FET , 1984 .

[30]  Kam Y. Lau,et al.  11‐GHz direct modulation bandwidth GaAlAs window laser on semi‐insulating substrate operating at room temperature , 1984 .

[31]  Osamu Wada,et al.  Monolithic PIN/preamplifier circuit integrated on a GaAs substrate , 1983 .

[32]  K. Iga,et al.  Chemically etched-mirror GaInAsP/InP lasers - Review , 1982, IEEE Journal of Quantum Electronics.

[33]  C. Y. Chen,et al.  High‐sensitivity Ga0.47In0.53As photoconductive detectors prepared by vapor phase epitaxy , 1984 .

[34]  Osamu Wada,et al.  AlGaAs/GaAs microcleaved facet (MCF) laser monolithically integrated with photodiode , 1982 .

[35]  Robert D. Burnham,et al.  Impurity-disordered, coupled-stripe Al(x)Ga(1-x)As-GaAs quantum well laser , 1985 .

[36]  P. Tien Integrated optics and new wave phenomena in optical waveguides , 1977 .

[37]  Amnon Yariv,et al.  AℓGaAs Lasers With Micro-cleaved Mirrors Suitable for Monolithic Integration , 1982, Topical Meeting on Integrated and Guided-Wave Optics.

[38]  Q switching of low‐threshold buried‐heterostructure diode lasers at 10 GHz , 1984 .

[39]  Hiroshi Okamoto,et al.  Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption , 1985 .

[40]  Larry A. Coldren,et al.  Etched mirror and groove-coupled GaInAsP/InP laser devices for integrated optics , 1982 .

[41]  Colin E. C. Wood,et al.  Integrated double heterostructure Ga0.47In0.53As photoreceiver with automatic gain control , 1981, IEEE Electron Device Letters.

[42]  Kam Y. Lau,et al.  Monolithic optoelectronic integration of a GaAlAs laser, a field‐effect transistor, and a photodiode , 1984 .

[43]  Nick Holonyak,et al.  Continuous 300-K laser operation of strained superlattices , 1983 .

[44]  M. Ito,et al.  Monolithic integration of a metal—semiconductor—metal photodiode and a GaAs preamplifier , 1984, IEEE Electron Device Letters.

[45]  Kiyoshi Asakawa,et al.  GaAs and GaAlAs Equi-Rate Etching Using a New Reactive Ion Beam Etching System , 1983 .

[46]  S. Sasaki,et al.  GaAs optoelectronic integrated light sources , 1983 .

[47]  H Matsueda,et al.  Monolithic integration of a laser diode, photo monitor, and electric circuits on a semi-insulating GaAs substrate. , 1984, Applied optics.

[48]  T. Ishikawa,et al.  MBE growth of extremely high‐quality GaAs–AlGaAs GRIN‐SCH lasers with a superlattice buffer layer , 1985 .

[49]  C. Y. Chen,et al.  New minority hole sinked photoconductive detector , 1983 .

[50]  M. Ito,et al.  A monolithically integrated AlGaAs/GaAs p-i-n/FET Photoreceiver by MOCVD , 1983, IEEE Electron Device Letters.

[52]  N. Bar-chaim,et al.  GaAs integrated optoelectronics , 1982, IEEE Transactions on Electron Devices.

[53]  Kenichi Kasahara,et al.  Monolithically integrated In(0.53)Ga(0.47)As-PIN/InP-MISFET photoreceiver , 1984 .

[54]  Takakiyo Nakagami,et al.  Compact transmitter and receiver modules with optoelectronic-integrated circuits for optical LAN's , 1986 .

[55]  Amnon Yariv,et al.  A monolithic integration of GaAs/GaAlAs bipolar transistor and heterostructure laser , 1980 .

[56]  Large‐signal dynamics of an ultrafast semiconductor laser at digital modulation rates approaching 10 Gbit/s , 1985 .

[57]  Tadashi Fukuzawa,et al.  Monolithic integration of a GaAlAs injection laser with a Schottky‐gate field effect transistor , 1980 .

[58]  R. M. Kolbas,et al.  Planar monolithic integration of a photodiode and a GaAs preamplifier , 1983 .

[59]  Kenichi Iga,et al.  Room‐temperature pulsed oscillation of GaAlAs/GaAs surface emitting injection laser , 1984 .

[60]  Kenya Nakai,et al.  AlGaAs/GaAs p‐i‐n photodiode/preamplifier monolithic photoreceiver integrated on a semi‐insulating GaAs substrate , 1985 .

[61]  Y. Sasai,et al.  Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors , 1984 .

[62]  A. Yariv,et al.  Integration of an injection laser with a Gunn oscillator on a semi‐insulating GaAs substrate , 1978 .

[63]  A. Yariv,et al.  The beginning of integrated optoelectronic circuits , 1984, IEEE Transactions on Electron Devices.

[64]  T. H. Windhorn,et al.  Room‐temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate , 1985 .

[65]  O. Wada,et al.  High performance ridge-waveguide AlGaAs/GaAs multiquantum-well lasers grown by molecular beam epitaxy , 1982, 1982 International Electron Devices Meeting.

[66]  Osamu Wada,et al.  AlGaAs/GaAs multiquantum-well (MQW) laser applied to monolithic integration with FET driver , 1983 .

[67]  T. Terakado,et al.  Monolithically integrated high-speed light source using 1.3-µm wavelength DFB-DC-PBH laser , 1986 .

[68]  A. Yariv,et al.  Bistable optical electrical/microwave switching using optically coupled monolithically integrated GaAlAs translasers , 1984 .

[69]  Kenya Nakai,et al.  Monolithic four-channel photodiode/amplifier receiver array integrated on a GaAs substrate , 1986 .

[70]  H. Inaba,et al.  Novel structure of laser diode and light-emitting diode realised by coaxial transverse junction (CTJ) , 1984 .

[71]  Joseph M. Ballantyne,et al.  An integrated photoconductive detector and waveguide structure , 1980 .

[72]  R. E. Nahory,et al.  Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver , 1980 .

[73]  Amnon Yariv,et al.  Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor , 1982 .

[74]  I. Mito,et al.  Lasing mode and spectral linewidth control by phase tunable distributed feedback laser diodes with double channel planar buried heterostructure (DFB-DC-PBH LD's) , 1985, IEEE Journal of Quantum Electronics.

[75]  Osamu Wada,et al.  Monolithic integration of a low threshold current quantum well laser and a driver circuit on a GaAs substrate , 1985 .

[76]  Takakiyo Nakagami,et al.  400 Mbit/s transmission experiment using two monolithic optoelectronic chips , 1985 .

[77]  Stewart E. Miller,et al.  Integrated optics: An introduction , 1969 .

[78]  Won-Tien Tsang,et al.  Ultra-low threshold, graded-index waveguide, separate confinement, CW buried-heterostructure lasers , 1982 .

[79]  Kenju Otsuka,et al.  Dynamic behaviour of a GaAs-AlGaAs MQW laser diode , 1983 .

[80]  U. Koren,et al.  Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP , 1982 .

[81]  Won-Tien Tsang,et al.  Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy , 1982 .

[82]  T. H. Windhorn,et al.  AlGaAs double‐heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate , 1984 .

[83]  A. Y. Cho,et al.  Ultrahigh speed modulation‐doped heterostructure field‐effect photodetectors , 1983 .

[84]  Anis Husain,et al.  Optical Interconnect Of Digital Integrated Circuits And Systems , 1984, Photonics West - Lasers and Applications in Science and Engineering.

[85]  L. Figueroa,et al.  Frequency and pulse response of a novel high-speed interdigital surface photoconductor (IDPC) , 1981, IEEE Electron Device Letters.

[86]  Naoki Chinone,et al.  High Relaxation Oscillation Frequency (beyond 10 GHz) of GaAlAs Multiquantum Well Lasers , 1985 .

[87]  D. Kasemset,et al.  GaAs/GaAlAs selective MOCVD epitaxy and planar ion-implantation technique for complex integrated optoelectronic circuit applications , 1984, IEEE Electron Device Letters.

[88]  Y. F. Lin,et al.  Strained‐layer quantum‐well injection laser , 1984 .

[89]  W. Tsang Heterostructure semiconductor lasers prepared by molecular beam epitaxy , 1984 .

[90]  Krishna C. Saraswat,et al.  Effect of scaling of interconnections on the time delay of VLSI circuits , 1982 .

[91]  Takakiyo Nakagami,et al.  Compact transmitter module with a monolithic laser/driver circuit , 1985 .

[92]  N. Bouadma,et al.  Low threshold GaAs/GaAlAs BH lasers with ion-beam-etched mirrors , 1985 .