Simulation of the 4H-SiC Low Gain Avalanche Diode

Silicon Carbide device (4H-SiC) has potential radiation hardness, high saturated carrier velocity and low temperature sensitivity theoretically. The Silicon Low Gain Avalanche Diode (LGAD) has been verified to have excellent time performance. Therefore, the 4H-SiC LGAD is introduced in this work for application to detect the Minimum Ionization Particles (MIPs). We provide guidance to determine the thickness and doping level of the gain layer after an analytical analysis. The gain layer thickness d gain = 0 . 5 µ m is adopted in our design. We design two di ff erent types of 4H-SiC LGAD which have two types electric field, and the corresponding leakage current, capacitance and gain are simulated by TCAD tools. Through analysis of the simulation results, the advantages and disadvantages are discussed for two types of 4H-SiC LGAD.

[1]  Zhenzhong Zhang,et al.  Timing Performance Simulation for 3D 4H-SiC Detector , 2021, Micromachines.

[2]  Zhijun Liang,et al.  Characterization of the first prototype NDL Low Gain Avalanche Detectors (LGAD) , 2021 .

[3]  Hai Lu,et al.  Time Resolution of the 4H-SiC PIN Detector , 2021, Frontiers in Physics.

[4]  Zhijun Liang,et al.  Design of Low Gain Avalanche Detectors (LGAD) with 400 keV ion implantation energy for multiplication layer fabrication , 2020 .

[5]  A. Buzatu,et al.  Beam test results of NDL Low Gain Avalanche Detectors (LGAD) , 2020 .

[6]  D. Caforio,et al.  Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China , 2020, Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment.

[7]  Zhijun Liang,et al.  Radiation effects on NDL prototype LGAD sensors after proton irradiation , 2020, 2006.11691.

[8]  R. Arcidiacono,et al.  Analysis and numerical design of Resistive AC-Coupled Silicon Detectors (RSD) for 4D particle tracking , 2020 .

[9]  U. Grossner,et al.  High-Temperature Impact-Ionization Model for 4H-SiC , 2019, IEEE Transactions on Electron Devices.

[10]  Gabriele Giacomini,et al.  Development of a technology for the fabrication of Low-Gain Avalanche Diodes at BNL , 2018, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.

[11]  F. Ficorella,et al.  First FBK production of 50μmultra-fast silicon detectors , 2018, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.

[12]  F. Ficorella,et al.  Radiation resistant LGAD design , 2018, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.

[13]  Roberta Arcidiacono,et al.  Ultra-Fast Silicon Detectors for 4D tracking , 2017 .

[14]  V. Fadeyev,et al.  Radiation effects in Low Gain Avalanche Detectors after hadron irradiations , 2015 .

[15]  Tsunenobu Kimoto,et al.  Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices , 2015, IEEE Transactions on Electron Devices.

[16]  G. Kramberger,et al.  Technology developments and first measurements of Low Gain Avalanche Detectors (LGAD) for high energy physics applications , 2014 .

[17]  B. Jayant Baliga,et al.  Fundamentals of Power Semiconductor Devices , 2008 .

[18]  Ho-Young Cha,et al.  Impact Ionization Coefficients in 4H-SiC , 2008, IEEE Transactions on Electron Devices.

[19]  J. David,et al.  Temperature Dependence of Impact Ionization in Submicrometer Silicon Devices , 2006, IEEE Transactions on Electron Devices.

[20]  A. Scorzoni,et al.  Measurements and simulations ofcharge collection ef ficiency ofp + /n junction SiC detectors , 2005 .

[21]  N. Sano,et al.  Impact ionization coefficients of 4H silicon carbide , 2004 .

[22]  U. Rößler,et al.  Global band structure and near-band edge states , 1997 .

[23]  R. V. Overstraeten,et al.  Measurement of the ionization rates in diffused silicon p-n junctions , 1970 .

[24]  G. Kramberger,et al.  TCAD simulation and radiation damage modeling for low gain avalanche detector , 2021 .

[25]  Abraham Seiden,et al.  4D tracking with ultra-fast silicon detectors. , 2017, Reports on progress in physics. Physical Society.

[26]  J. Palmour,et al.  Conductivity Anisotropy in Epitaxial 6H and 4H Sic , 1994 .