Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes
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Gaudenzio Meneghesso | Enrico Zanoni | Matteo Meneghini | Berthold Hahn | Bastian Galler | B. Hahn | M. Meneghini | G. Meneghesso | E. Zanoni | B. Galler | Roland Zeisel | M. La Grassa | S. Vaccari | P. Drechsel | R. Zeisel | P. Drechsel | M. L. Grassa | S. Vaccari
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