High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs

A high temperature compensated voltage reference integrated circuit (IC), was designed and for the first time fabricated on silicon carbide (SiC) material, using MESFET devices. A planar finger type MESFET was developed for this purpose. The schematic and the principle of the presented circuit is based on a new concept that replace the typical bandgap reference and avoid the necessity of using an operational amplifier (OpAmp), which is not yet developed on SiC. The experimental temperature coefficient (TC) is significantly better than a Zener diode and comparable to the normal bandgap voltage references on silicon, but the present circuit is able to work up to 300°C. The circuit contains also a linearized temperature sensor.

[1]  J. B. Casady,et al.  A hybrid 6H-SiC temperature sensor operational from 25/spl deg/C to 500/spl deg/C , 1996 .

[2]  Haigang Yang,et al.  A novel low voltage Subtracting BandGap Reference with temperature coefficient of 2.2 ppm/° , 2011, 2011 IEEE International Symposium of Circuits and Systems (ISCAS).

[3]  M. Alexandru,et al.  Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs , 2012 .

[4]  M. Vellvehi,et al.  Design of logic gates for high temperature and harsh radiation environment made of 4H-SiC MESFET , 2010, CAS 2010 Proceedings (International Semiconductor Conference).

[5]  Y. Sugawara,et al.  20V-400A SiC Zener Diodes with Excellent Temperature Coefficient , 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

[6]  P. Godignon,et al.  Comparison between mesa isolation and p+ implantation isolation for 4H-SiC MESFET transistors , 2011, CAS 2011 Proceedings (2011 International Semiconductor Conference).

[7]  Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications , 2011 .

[8]  Philippe Godignon,et al.  SiC Schottky Diodes for Harsh Environment Space Applications , 2011, IEEE Transactions on Industrial Electronics.

[9]  Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material , 2010 .

[10]  P. Godignon,et al.  4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology , 2013 .