Dislocation scattering effects on electron mobility in InAsSb

Heteroepitaxial InAsSb is routinely prepared on InAs, InSb, or GaAs substrates under conditions favorable to dislocation formation, since the binary components are lattice mismatched by about 7.4%, and the ternary are mismatched to GaAs by between 7.2% and 14.5%, depending on composition. We here extend the description of electron scattering in InAsSb to include the effects of grain boundaries and dislocations. Comparison with experiment confirms that dislocation scattering has a strong effect on transport, while alloy scattering limits mobility in ternary samples grown with a minimum of defects.

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