Design and analysis of dynamically configurable electrostatic doped carbon nanotube tunnel FET

Abstract This paper proposes a novel design of dynamically configurable electrostatic doped double gate carbon nanotube tunnel FET (ED CN-TFET). The proposed device consists of intrinsic carbon nanotube (CN) as channel and electrostatic doping is created using polarity gates. Polarity gate allows dynamic configuration of source/drain region with different bias conditions. As conventional doping techniques are not applicable to CN which makes fabrication costly, proposed device will offer reduced thermal budget and process complexity. 3-D simulations have been performed and results show that proposed device gives promising results over conventional CN-TFET in terms of ION/IOFF ratio and subthreshold swing (SS). Proposed device has been analysed for various device parameters and it has been demonstrated to give better results as compared to conventional CN-TFET.

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