Raman scattering study of the recovery process in Ga ion implanted GaSb

Recovery process in GaSb crystals with Ga ion implantation and subsequent annealing by rapid thermal annealing (RTA) or furnace annealing (FA) methods are studied by Raman scattering. The intensity of the GaSb LO phonon mode decreases with increasing ion implantation fluence. It is found that the threshold fluence to the amorphization for the Ga ion implanted GaSb is 5×1013 cm−2. It is much lower than that for InP (1×1014 cm−2). In the face‐to‐face FA, the recovery processes in the Ga ion implanted GaSb are very different above and below the fluence of 5×1014 cm−2. For the 5×1014 cm−2 Ga ion implantation, no recovery is observed. Below 5×1014 cm−2 implantation, the GaSb LO mode intensity increases with increasing annealing temperature and with time up to 400 °C and 15 min, respectively. However, the recovery of damage is very poor compared with that of GaAs, InP, and GaP. On the other hand, in the Si3N4 caped RTA the recovery is observed even for the 5×1014 cm−2 implantation. New modes are observed at aro...

[1]  Yan-Kuin Su,et al.  Raman spectra of Si-implanted GaSb , 1990 .

[2]  D. Talwar,et al.  Raman scattering spectra in mixedGa1−xAlxAs(Sb)crystals , 1981 .

[3]  R. Laudise.  Crystal growth progress in response to the needs for optical communications , 1983 .

[4]  Stephen J. Pearton,et al.  Ion implantation damage and annealing in InAs, GaSb, and GaP , 1988 .

[5]  T. T. Yang,et al.  Infrared reflection and Raman scattering of ion‐implanted nitrogen in gallium phosphide , 1976 .

[6]  W. Richter,et al.  Characterization of UHV prepared Sb overlayers on (110) surfaces of III-V semiconductors , 1987 .

[7]  P. Gourley,et al.  The effects of ion‐implantation damage on the first‐order Raman spectra of GaP , 1983 .

[8]  Takashi Nakamura,et al.  Raman spectra from Si and Sn implanted GaAs , 1982 .

[9]  C. R. Rao,et al.  Study of ion-implantation damage in GaAs:Be and InP:Be using Raman scattering , 1983 .

[10]  L. J. Raubenheimer,et al.  Accurate Numerical Method for Calculating Frequency-Distribution Functions in Solids , 1966 .

[11]  O. Hildebrand,et al.  Ga 1-x Al x Sb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficients , 1981 .

[12]  W. A. Sunder,et al.  Czochralski growth and characterization of GaSb , 1986 .

[13]  R. Loudon,et al.  The Raman effect in crystals , 1964 .

[14]  P. M. Amirtharaj,et al.  Effects of As+ ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation , 1984 .

[15]  H. Asahi,et al.  Study of Ga ion implantation damage and annealing effect in Sn‐doped InP using Raman scattering , 1989 .

[16]  S. Sinha,et al.  Lattice dynamics of GaSb , 1975 .